Deflection Mapping is Useful for its Ability to Identify Distortion-prone GaAs Wafers

The International Conference on
Compound Semiconductor Manufacturing Technology

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P A P E R T I T L E

Deflection Mapping is Useful for its Ability to Identify Distortion-prone GaAs Wafers

A U T H O R / C R E D I T S

Michael D. Gibson
TriQuint Semiconductor, Inc., 2300 N.E. Brookwood Parkway
Hillsboro, Oregon 97124

A B S T R A C T

Deflection Mapping is a valuable technique in its ability to recognize distortion-prone SI-GaAs wafers. This method was entertained for the purpose of characterizing wafer distortion, after the number of stepper misalignments increased in photo-lithography, and the nature of the misalignments suggested the Rapid Thermal Anneal (RTA) process was the root cause. Not only did Deflection Mapping prove useful in addressing distor-tion at the unit process, it helped characterize distortion-prone boules. More importantly, it helped identify an unknowing sup-plier of distortion prone ingots. The metric that Deflection Mapping provides is now instrumental in qualifying tools and matching multiple RTA's to one another.

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