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GaAs MANTecH On-Line Search
This will allow you to search our On-Line Digest Paper Abstract pages.
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The
International Conference on
Compound Semiconductor Manufacturing Technology
"Sharing Ideas Throughout the
Industry"
2000 On-line
Digest Table of Contents
Order everything you need with our convenient
on-line
order form, or contact Margaret
Doyle at mdoyle@gaasmantech.org
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Full document in PDF format |
View |
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1a |
Compound
Semiconductor Requirements for Fiber Optic Telecommunications
Mike Scott,
Nortel Networks |
Abstract |
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1b |
Present
and Future of GaAs Technologies in Japan
Masumi Fukuta, Fujitsu Quantum Devices Ltd. |
Abstract
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2a
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A New Production Solution for High Selective and Low-Damage Etching
of GaAs-Based Devices
Jewon Lee, Mike Debre, Dave Johnson,
Jay Sasserath, Plasma-Therm, Inc. |
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2b
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Improvement of Surface Morphology for InGaP HBT
G.K. Essilfie, T.S. Low, Hengchang
Chou, D.K. Kuhn, M. DeLaCruz, D.C. D'Avanzo, Agilent Technologies |
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2c
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III-V Dry Etching by CCD-controlled in situ Interferometry
W. John, L. Weixelbaum, H. Wittrich, G.
Frankowski, J. Wurfl, Ferdinand-Braun Institute. |
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2d
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Electrochemical Etching Impact On GaAs Process, Mask Design and
Device Performance
I. Hallakoun, T. Boterashvili, G. Bunin,
Y. Shapira |
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2e
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Corrosion Behavior and Surface Studies of GaAs in Acidic Solutions
C.A. Steer, J.L. Luo, D.G. Ivey.
Dept. of Chemical and Materials Engineering, University of Alberta |
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3a
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InP HBT Technology and Applications
A.K. Oki, D.C. Streit, K.W. Kobayashi,
A. Guiterrez-Aitken, L.T. Tran, T. Block, P. Chin, P.S. Grossman, F.
Yamada, D. Sawdai, M.D. Lammert, M. Wojtowicz, E. Kaneshire, K.
Sato, G. Lesslie, L. Yang, H.C. Yen, TRW Inc. |
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3b
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Advanced InP/InGaAs HBTs Technology for Low-Power
Lightwave
Communication Circuit Applications (Invited)
S. Yamahata, H. Nakajima, M. Ida, E.
Sano, Y. Ishii. NTT Photonics Laboratories |
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3c |
WITHDRAWN |
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3d
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RF-LDMOS: A Silicon-Based, High Power, High Efficiency Linear Power
Amplifier Technology.
W. Burger, E. Agyekum, O. Ayoola, G.
Bouisse, W. Brakensiek, H. Brech, B. Davidson, C. Dragon, G.
Formicone, G. Funk, E Krvavac, D. Lamey, W.W. Lau, G. Ma, B. Pryor,
X. Ren. Motorola, Inc. |
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4a
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Compound Semiconductors in Wireless Communications Systems
Anthony A. Triolo, Lucent Technolgies |
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4b |
Integration of
GaAs MMIC Technology in Commercial mm-Wave SATCOM and LMDS
Transceivers
Roberto Alm, Raytheon RF
Components |
Abstract |
4c
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Very High Efficiency and Low Cost Power Metamorphic HEMT MMIC
Technology
P.C. Chao, K.C. Hwang, D.W. Tu, J.S.M.
Liu, O. Tang, K. Nichols. Sanders, A Lockheed Martin Company |
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4d
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Packaging Technologies for RFIC's: Increasing Integration
Albert C. Imhoff, Jr. M/A-COM
Semiconductor |
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5a
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Etching InP with H2, BCI3 and Ar
Edwin Sabin, TRW |
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5b
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A Design of Experiment for High Throughput GaAs Via Etch by Reactive
Ion Etch
Juifen Lee, Hungchun Tsai, Yee-Shyi
Chang, National Tsing-Hua University |
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5c
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Breaking the 1000 Wafers/Week Barrier Through Substrate Via Process
K.M. Adams, L.S. Klingbeil, Motorola,
Inc. |
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5d
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Adapting Electrostatic Chucks for Dry Etching of GaAs
D. Tossell, K. Powell, M. Bourke, Y
Song. Trikon Technologies Ltd. |
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6a
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A Comparative Study of As, Sb and P-based Metamorphic HEMT
D. Lubyshev, W.K. Liu, T. Stewart, A.B.
Cornfeld, J. Patton, J. Mirecki Millunchick, W. Hoke, C. Meaton, K.
Nichols, S.P. Svensson, Quantum Epitaxial Designs, Inc. |
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6b
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MOVPE Grown Metamorphic HEMT Epitaxial Wafers
T. Tanaka, T. Hashimoto, M. Washima, H. Sakaguchi. Hitachi
Cable, Ltd. |
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6c
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Material quality
and uniformity issues of MOVPE-grown GaInP/GaAs HBTs
K. Kurpas, F. Brunner, M. Achouche, T.
Spitzbart, E. Richter, T. Bergunde, D. Rentner, M. Mai, J. Wurfl, M.
Weyers. Berdinand-Braun Institute |
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6d |
WITHDRAWN |
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6e
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Productive Availability of Non-destructive Thickness Measurement
Techniques
Ryo Hattori and Tomoki Oku.
Mitsubishi Electric Corp. |
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6f
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New Barrel Type MOVPE Reactor for 6" Epitaxial Wafers
T. Osada, N. Fukuhara, T. Takada, M.
Hata. Sumitomo Chemical Co., Ltd. |
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6g
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Contactless Room Temperature Characterization of PHEMT Structures
Using Surface Photovoltage Spectroscopy.
M. Leibovitch, I. Hallakoun, S. Solodky,
N. Ashkenasy, G. Bunin, Y. Rosenwaks, Y. Shapira. ELTA
Electronics Industries Ltd. and Tel-Aviv University |
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6h
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Forecasting Methods for MMIC RF Yield
R. Tsai, M. Nishimoto, R. Lai.
TRW, Inc. |
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6i
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New On-Wafer Digital Laser Trimming Technique for Current Adjustment
of GaAs FET
Y. Iwasaki, H. Furukawa, T. Tanaka, D. Ueda.
Matsushita Electronics Corp. |
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6j
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Assessing
Circuit Hermeticity By Electrolysis
W. Roesch, S. Peterson, A. Poe, S. Brockett, S. Mahon, J. Bruckner.
TriQuint Semiconductor, Inc. |
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6k
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A Better Way to Predict Reliability from Lifetest Data Using a
Regression Technique
J. Scarpulla, D. Eng, D. Leung.
TRW Inc. |
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7a
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Reliability of InGaP-Emitter
HBTs
B. Yeats, P. Chandler, M. Culver, D.
D'Avanzo, G. Essilfie, C. Hutchingson, D. Kuhn, T. Low, T. Shirley,
S. Thomas, W. Whiteley. Agilent Technologies
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7b
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Characterization of InGaP/GaAs HBTs under Temperature and Current
Stress
T. Oka, K. Hirata, H. Takazawa, I. Ohbu.
Hitachi,Ltd. |
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7c
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Performance and Reliability of an Advanced Production GaAs HBT
Process Technology
F.M. Yamada, A.K. Oki, D.C. Streit, B.L.
Hikin, E.N. Kaneshiro, M.D. Lammert, L.T. Tran, T.R. Block, P.C.
Grossman, J.R. Scarpulla, A.L. Guitierrez-Airken. TRW Inc. |
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7d
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7e
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Transient Characteristics of InGaP/GaAs/AIGaAs Double Heterojunction
Bipolar Transistors
C.R. Lutz, R.E. Welser, N. Pan.
Kopin Corporation |
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8a |
Process Development on 0.1-mm
Gat E/D MESFETs with fT and fmax> 100 GHz Using Direct Ion
Implantation for Low Power IC Applications
Z. Tang, H. Hsia, D. Becher, D. Caruth, M. Feng
Microelectronics Laboratory, Department of Electrical and Computer Engineering,
University of Illinois, Urbana, IL 61801
|
Abstract |
8b
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Cost Effective MeV Isolation Mask for Heterojunction Bipolar
Transistors
J. Gillespie, C. Bozada, R. Dettmer, R.
Fitch, K. Nakano, J.Sewell, D. Via Wright-Patterson, AFB |
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8c
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Direct bonding of heterogeneous wafers using surface activated
bonding method at room temperature
T. Watanabe, T.R. Chung, T. Suga.
University of Tokyo |
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8d
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Zero-Offset Low-Knee-Voltage GaInP/GaAs Collector-up
Tunneling-Collector Heterojunction Bipolar Transistors for
High-Efficiency High Power Amplifiers
K. Mochizuki, R.J. Welty, P.M. Asbeck.
University of California, San Diego. |
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8e
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Optimization of HIGFETs on LT-GaAs Buffer
J.K. Abrokwah, M. Sadaka, B. Bernhardt.
Motorola, Inc. |
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8f
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Utilization of
Design of Experiments Combined with Technical Knowledge to Increase
Manufacturability of HIGFET Device
Eugene Huang, Mark R. Wilson.
Motorola, Inc. |
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8g
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Highly accelerated stressing of GaAs bulk resistors
E. Sabin, J. Scarpulla, Y.C. Chou, C.S.
Wu. TRW |
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8h
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9a
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Transitioning Technological Innovation - A Market Perspective
Brian R. Smith. Booz Allen Hamilton, Inc. |
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9b
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9c
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GaN Electronic Devices
for Microwave Power Applications
S.C. Binari, K. Ikossi-Anastasiou, J.A.
Roussos, D. Park, D.D. Koleske, A.E. Wickenden, R.L. Henry.
Naval Research Laboratory
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9d
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Business Opportunities for GaN Devices
Fred A. Blum. Nitres, Inc. |
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10a
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10b
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10c
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A Manufacturable Multi-Level Interconnect Process Using Twp Layers
of 4.5mm-Thick Plated Gold
J.W.L. Dilley and S.K. Hall.
M/A-COM |
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11a
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