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Reversible and Permanent Wafer Bonding for GaAs Processing
T. Glinsner1, T. Luxbacher1, P. Lindner1, C. Schaefer1, R. Michaels2, J. Palensky2, V. Dragoi3 and M. Reiche3
1 EV Group
2 EV Group US, Inc.
3 Max Planck Institute of Microstructure Physics
Wafer bonding for Compound Semiconductor processing is a new manufacturing technology, which is highly appreciated by the industry and supports successfully new ways of processing thin and large diameter GaAs wafers. GaAs wafers temporarily and reversibly bonded to a carrier substrate are suited for reliable back thinning and backside lithography. Permanent wafer bonding allows the production of Si/GaAs wafer heterostructures for the integration of optoelectronic devices into Si integrated circuit (IC) technology.
This paper will describe two state-of-the art methods and corresponding results of wafer bonding for manufacturing thin and therefore fragile GaAs wafers:
(a) Aligned reversible wafer bonding to a rigid carrier substrate by wax for optimum handling during production;
(b) Permanent bonding to a Si wafer via an epoxy or glass-like interlayer.
Reversible and Permanent Wafer Bonding for GaAs Processing
A U T H O R / C R E D I T S
T. Glinsner1, T. Luxbacher1, P. Lindner1, C. Schaefer1, R. Michaels2, J. Palensky2, V. Dragoi3 and M. Reiche3
1 EV Group
2 EV Group US, Inc.
3 Max Planck Institute of Microstructure Physics
Wafer bonding for Compound Semiconductor processing is a new manufacturing technology, which is highly appreciated by the industry and supports successfully new ways of processing thin and large diameter GaAs wafers. GaAs wafers temporarily and reversibly bonded to a carrier substrate are suited for reliable back thinning and backside lithography. Permanent wafer bonding allows the production of Si/GaAs wafer heterostructures for the integration of optoelectronic devices into Si integrated circuit (IC) technology.
This paper will describe two state-of-the art methods and corresponding results of wafer bonding for manufacturing thin and therefore fragile GaAs wafers:
(a) Aligned reversible wafer bonding to a rigid carrier substrate by wax for optimum handling during production;
(b) Permanent bonding to a Si wafer via an epoxy or glass-like interlayer.
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