Power GaInP/GaAs
HBTs for High Voltage Operation
P. Kurpas, A.
Maaßdorf, W. Doser*, W. Köhler, P. Heymann, B. Janke, F. Schnieder,
H. Blanck*, P.
Auxemery**, D. Pons**, W. Heinrich, J. Würfl
Ferdinand-Braun-Institut
für Höchstfrequenztechnik (FBH)
Albert-Einstein-Str
.11, 12489
Phone:
+49-30-6392-2674, fax: +49-30-6392-2685, e-mail: kurpas@fbh-berlin .de
* United Monolithic
Semiconductors GmbH, Wilhelm-Runge-Str. 11, 89081
Phone:
+49-731-505-3097, Fax: +49-731-505-3005, e-mail: doser@ums-ulm .de
** United Monolithic
Semiconductors S.A.S., Route Departementale 128, 91401
Phone:
+33-1-69330212, Fax: +33-1-69330203, e-mail: dominique.pons@ums-gaas .com
Keywords: GaInP, power HBT,
high voltage, heatsinking, flip-chip mounting
Abstract
We report on GaInP/GaAs
HBTs tuned for operation at high bias voltage as commonly used for base station
amplifiers . These devices deliver up to 10 W at 26 V and 2 GHz. Their ruggedness is
demonstrated by operation up to 36 V, where still 6 W output power is obtained
despite of very high dissipated power of ~ 9 W. The power performance of these
HBTs is limited by heatsinking conditions. Conventional backside soldering on a
heatsink is compared with flip-chip soldering on AlN submount as developed at
FBH. The superiority of flip-chip mounting is predicted by thermal simulations
and confirmed by increased output power, higher efficiency and higher gain.
Especially, PAE up to 83 % and 15 dB gain were measured on flip chip mounted
HBTs delivering 5.5 W of output power.