Predictive
Modeling of InGaP/GaAs HBT Noise Parameters from DC and S-Parameter Data for
Wireless Power Amplifier Design
James Chingwei Li 1 ,
Peter J. Zampardi 2 , and Van Pho 3
1 UCSD, ecE Dept., 9500
Gilman Dr., MS 0407, La Jolla, CA 92093; (858) 414-0159; jamescli@alum.mit.edu
2 Skyworks Solutions Inc., 2427 W. Hillcrest Dr., MS 889-A02, Newbury Park, CA
91320; (805) 480-4728;
peter.zampardi@skyworksinc.com
3 Skyworks Solutions Inc.,
Keywords: HBT, Noise
Parameters, Modeling, Parameter Extraction, Amplifier
Abstract
Noise characterization of
bipolar transistors is typically a lengthy and costly process. As a result,
routine monitoring of microwave noise does not generally occur for HBT
technologies or products. In contrast, vast quantities of parametric DC data
and S-parameter data are measured during the regular course of technology
development and production. In work by Voinigescu et al [1], DC and S-parameter
data are used to predict Silicon BJT and Silicon-Germanium HBT noise
parameters. The goal of this work is to apply and adapt, if necessary, the
method of [1] to InGaP/GaAs HBTs.