Transfer of GaAs pHEMT Technologies from Infineon to TriQuint

Gerard Mahoney, Travis Abshere, Kamal Avala, Brad Avrit, Otto Berger, Becca Berggren, David Brindza, Martin Brophy, Raymond Chan, Thomas Grave, Bernhard Haserer, Ronald Herring, Randal Hill, Michael Hovey, William Howell, Lisa Huynh, Gary Igo, Corey Jordan, Wolfgang Liebl, Li Liu, Steven Mahon, Edward Maxwell, Debra Maxwell, Paul Miller, Richard Moreton, Andrew Ping, Fredrick Pool, Matthew Porter, Fabian Radulescu, Edward Rhodes, Tertius Rivers, Thorsten Saeger, Donna Sison, Michele Wilson, Jinhong Yang, Ernst Zotl

TriQuint Semiconductor, 2300 N.E. Brookwood Pkwy, Hilsboro, OR 97124

(503) 615-9246 jmahoney@tqs.com

Keywords: Technology Transfer, AlGaAs, InGaAs, pHEMT, Heterojunction

This paper documents the transfer of two AlGaAs / InGaAs Pseudomorphic High Electron Mobility Transistor (pHEMT) Technologies from the Infineon Technologies AG facility in Perlach Germany to TriQuint Semiconductor in Hillsboro, Oregon.

We will present:

• The methods used for early technology compatibility assessments and goal setting.
• The qualification of equipment transferred from Infineon after modifications to conform to U.S. standards.
• The qualification of epitaxial suppliers.
• The development methodologies of technologies new to TriQuint.
• The transfer and integration of Infineon processing experts into the TriQuint organization.
• Comparisons of pHEMT parameters of devices fabricated at Infineon and TriQuint.

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