Dense Silicon Nitride for MMIC Protection with Low Compressive Stress Grown in LF PecVD

Willy Chiou, Brian Lee, Benny Ho, Gary Hu, C.H. Hua, D.W. Tu, Joe Liu
Win Semiconductors Corp. N. 60 Technology 7th Rd., Hway Technology Park, Kuei Shan Hsiang, Tao Yuan Shien, Taiwan (333)

We demonstrate for the first time in a high volume MMIC production line that silicon nitride protection film can be grown with LF-only plasma-enhanced CVD. The nitride film was deposited using PecVD at the 250^oC with a compressive stress of 2.2E09 dyn/cm2 and a low BOE etching rate of 10Ǻ/sec. Film produced can pass the HAST (Highly Accelerated Stress Test) test with no visually detectable degradation.

Keywords: OecVD, silicon nitride, low frequency, stress, dense

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