Performance and Fabrication of GaN/AlGaN
Power MMIC at 10 GHz
F. Benkhelifa, R. Kiefer, S. Muller, F. van Raay, R. Quay, R.E. Sah, M. Dammann, M. Mikulla, G. Weimann
Franhofer
Institute for Applied Solid State Physics (IAF), tullastrasse 72, D-79108
Freiburg, Germany
Email: benkhelifa@iaf.fhg.de
High performance and
fabrication of a coplanar 2 stage power amplifier based on a GaN/AlGaN HEMT
technology on 2-inch SiC substrate has been realized. At 10 GHz the coplanar MMIC delivers a
maximum output power of 13.4 W, measured on wafer in pulsed mode, a linear gain
of 20 dB and a maximum