Recent
Achievements in SopSiC substrates for High Power and High Frequency
applications
1 Picogiga
Int., Place Marcel Rebuffat, 91971
2 Soitec, Parc technologique des
Fontaines, 38926 Crolles Cedex, France
Engineered Substrates is an established material in the silicon industry.
Engineered substrates enable the optimization of the active device, the top
layer and the bulk independently. Today we present the development of Silicon
silicon on poly-crystalline Silicon silicon Carbide carbide (SopSiC) substrate
obtained by the Smart Cut™ technology. SopSiC substrate structure combines the
advantages of Silicon and SiC materials.
Compared to the conventional SiC single crystal
approach, this innovative approach offers a larger diameter substrate and a
lower cost solution. SopSiC substrates are proposed to support the development
and future industrialization of GaN microelectronics for commercial and
military applications. The recent results, presented hereafter, show that
materials could cover various areas from high frequency to high power devices
such as AlGaN/GaN transistors.