Student Paper

Comparison of Different GaN Etching Techniques

Lei Ma¹, K. Fareen Adeni¹, Chang Zeng¹, Yawei Jin¹, Krishnanshu Dandu¹, Yoganand Saripalli², Mark Johnson², Doug Barlage¹

¹ Department of Electrical Engineering, North Carolina State University, Raleigh, NC 27695, USA

Phone: 919-513-0442, Email: lma@ncsu.edu

² Department of Materials Science and Engineering, North Carolina State University, Raleigh, NC 27695, USA

Keywords: GaN, Nitride, Binary Etching, Profilometer, AFM

Abstract

Several Gallium Nitride etching techniques are reviewed and compared. The GaN binary etching technique is selected and used for this experiment, the GaN profile after etching is measured with Dektak profilometer and AFM. Three types of GaN films such as intrinsic GaN, n-type GaN and p-type GaN have been used in the binary etching technique. The experiment results show that binary etching can be utilized for GaN wet etching with good control and precision at room temperature, and at higher temperatures, too.

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