27 GHz Flip-Chip Assembled pHEMT Oscillator

Yue-ming Hsin, Yu-An Liu, Che-ming Wang, Wei-kuo Huang and Tsung-Jung Yeh*

Department of Electrical Engineering, National Central University, Jhongli 32001, Taiwan

*WIN Semiconductors Corp. No. 69, Technology 7th Rd., Hwaya Technology Park

Kuei Shan Hsiang, Tao Yuan Shien, Taiwan

e-mail: yhsin@ee.ncu.edu.tw, Tel: +886-3-4227151 ext. 34468

Keywords: Flip-Chip, Oscillator, pHEMT, MIC

Abstract

In this paper, we present a microwave integrated circuit (MIC) with flip-chip assembled 0.15mm-gate pHEMT. Single transistor (pHEMT of 4´75 mm from WIN Semiconductor) with negative resistance combined with resonant network was designed for Ka-band oscillator. After characterizing the 0.15mm-gate pHEMT, the passive components and CPW connection were designed and fabricated on Al₂O₃ substrate with consideration of bump transition. The measured output signal was at 27.55 GHz while biasing at V_DS = 2 V and I_D = 50 mA (V_GS = -0.5 V), respectively. The measured signal output power is 1.87 dBm with consideration of cable loss. The corresponding phase noise is -84 dBc/Hz@1MHz offset. To our knowledge, this is the 1st flip-chip assembled pHEMT oscillator using feedback methodology at Ka-band.

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